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4G+5G 12/4 band 4W Amplifier module
2200
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Items | Spec | ||||||
Channel | 4G-LTE | 5G-NR | |||||
band | TX(PA) | RX(LNA) | band | TX(PA) | RX(LNA) | ||
Frequency | B5 | 869～894MHz | 824～849MHz | N28 | 758～803MHz | 703～748MHz | |
B8 | 930～960MHz | 885～915MHz | N1 | 2110～2170MHz | 1920～1980MHz | ||
B3 | 1805～1880MHz | 1710～1785MHz | N41 | 2515～2675MHz | 2515～2675MHz | ||
B1 | 2110～2170MHz | 1920～1980MHz | N78 | 3400～3600MHz | 3400～3600MHz | ||
B39 | 1880～1920MHz | 1880～1920MHz | N79 | 4800～4900MHz | 4800～4900MHz | ||
B34 | 2010～2025MHz | 2010～2025MHz |
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B40 | 2300～2400MHz | 2300～2400MHz |
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B41 | 2555～2655MHz | 2555～2655MHz |
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Output power | 36±1dBm | -10±1dBm | 36±1dBm | -10±1dBm | |||
Gain | 35±2dB | 20±2dB | 35±2dB | 20±2dB | |||
Flatness | ≤4.5dB | ≤4.5dB | ≤4.5dB | ≤4.5dB | |||
ACPR | ≤-30dBc | / | ≤-30dBc | / | |||
EVM | ≤8% | / | ≤8% | / | |||
NF | / | ≤5dB | / | ≤8dB | |||
Max input power | 0dBm | -10dBm | 0dBm | -10dBm | |||
Spurious | 9kHz～1GHz：≤-36dBm/30kHz；1GHz～12.75GHz：≤-30dBm/30KHz | ||||||
VSWR | ≤2.0 | ||||||
The response of power amplifier supply (PA on/off,LNA on/off)
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Voltage | DC+28V | ||||||
Current | ≤4.5A | ||||||
Power interface | VH-2A(Space 3.96mm) male | ||||||
Monitor interface | PHD2.0MM-2*4PIN | ||||||
RF interface | TX，RX ,ANT use MCX，ANT use SMA | ||||||
Size | 260×190×20mm | ||||||
Channel1 control (N41/B41/N78/N79) | EN1 channel enable, 0-PA on, 1- PA off. T/R1 channel 1 TDD:0-TDD PA on,LNA off; 1-TDDchannel LNA on,PA off. F1-2，F1-1 band selection: 00－NC，01－B41&N41；10－N78，11－N79； EN2 channel enable, 0－PA 0n, 1-PA off F2-1 band selection:0－N28，1－B1&N1； EN3 channel enable，0－PA on,1-PA off. T/R1 channel 1：0－TDD channel 1 PA on,LNA off, 1－TDD channel 1LNA on,PA off. F3-0,0-B3, 1-B34/B39/B40/B41 F3-2,F3-1 band selection：00－B34，01－B39；10－B40，11－B41&N41； EN4 channel enable, 0-PA on,1-PA off. F4-2,F4-1 band selection: 00－B8，01－B5；10－B3，11－B40 Internal pull up to 3.3V, suspended as 1 | ||||||
Channel 2 control (N1/B1/N28) | |||||||
Channel 3 control (B34/B39/B40/B41&N41) | |||||||
Channel 4 control (B3/B5/B8) | |||||||
interface default status | |||||||
With years of in-depth experience in the RF power amplifier module field, we take technological innovation as the foundation and quality reliability as the commitment. We provide global customers with customized RF power amplifier module solutions covering the full frequency band and full power level, empowering the high-quality development of multiple fields such as communications, industry, and low-altitude economy.Providing high-performance RF power amplifier modules.
Responses quickly not only for for standardized products buat also for customer’s customized needs.
1.Factory Direct Supply: Professional RF amplifier manufacturer with independent R&D and production workshop, no middleman cost, competitive ex-factory price and fast lead time.
2. High Stability & Durability: Original imported GaN-on-SiC core chip, rigorous aging test and high-low temperature screening, support 24/7 long-term CW working without performance attenuation.
3. Complete Protection System: Built-in VSWR mismatch, over-temperature, over-current and reverse power protection, effectively avoid burnout under harsh test environment, lower equipment failure rate.
4. Customized & After-sales Service: Support gain tuning, interface modification, digital remote control OEM & ODM service; provide professional technical support and global after-sales debugging service.
5. Easy System Integration: Standard industrial interface, compact integrated structure, compatible with global mainstream test instruments and laboratory system integration standards.
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